PNY Electronics PNY 2GB vs Samsung M378A1G43DB0-CPB 8GB

Overall score

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Overall score

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Differences Specifications Comments

Differences

PNY Electronics PNY 2GB

Reasons to consider
PNY Electronics PNY 2GB

Below the latency in the PassMark tests, ns

27 36

Around 25% lower latency

Samsung M378A1G43DB0-CPB 8GB

Reasons to consider
Samsung M378A1G43DB0-CPB 8GB

Faster reading speed, GB/s

15 13.8

Average value in the tests
Faster write speed, GB/s

10.3 8.4

Average value in the tests
Higher memory bandwidth, mbps

17000 10600

Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications

PNY Electronics PNY 2GB

Samsung M378A1G43DB0-CPB 8GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

27 36
Read speed, GB/s

13.8 15.0
Write speed, GB/s

8.4 10.3
Memory bandwidth, mbps

10600 17000

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

2274 2569

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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