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PNY Electronics PNY 2GB
Samsung M471A1K43CBCBCRC 8GB

PNY Electronics PNY 2GB vs Samsung M471A1K43CBCBCRC 8GB

Overall score
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Overall score
star star star star star
Samsung M471A1K43CBCBCRC 8GB

Samsung M471A1K43CBCBCRC 8GB

Differences Specifications Comments

Differences

PNY Electronics PNY 2GB Reasons to consider
PNY Electronics PNY 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 38
    Around 29% lower latency
  • Faster reading speed, GB/s
    13.8 left arrow 9.3
    Average value in the tests
  • Faster write speed, GB/s
    8.4 left arrow 6.1
    Average value in the tests
Samsung M471A1K43CBCBCRC 8GB Reasons to consider
Samsung M471A1K43CBCBCRC 8GB
Report a bug
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
PNY Electronics PNY 2GB
Samsung M471A1K43CBCBCRC 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 38
  • Read speed, GB/s
    13.8 left arrow 9.3
  • Write speed, GB/s
    8.4 left arrow 6.1
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2274 left arrow 1493

PNY Electronics PNY 2GB RAM comparisons

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Samsung M471A1K43CBCBCRC 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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