RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramaxel Technology RMT3170EB68F9W1600 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Compare
Ramaxel Technology RMT3170EB68F9W1600 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Overall score
Ramaxel Technology RMT3170EB68F9W1600 4GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Ramaxel Technology RMT3170EB68F9W1600 4GB
Report a bug
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Report a bug
Below the latency in the PassMark tests, ns
18
43
Around -139% lower latency
Faster reading speed, GB/s
20.4
11.4
Average value in the tests
Faster write speed, GB/s
17.2
7.7
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Ramaxel Technology RMT3170EB68F9W1600 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
43
18
Read speed, GB/s
11.4
20.4
Write speed, GB/s
7.7
17.2
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1823
3814
Ramaxel Technology RMT3170EB68F9W1600 4GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Kingston HP26D4U6D8ME-16X 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston ACR16D3LS1KNG/4G 4GB
Transcend Information AQD-D4U4GN21-SG 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
Kingston KVR16N11/8-SP 8GB
Apacer Technology 76.D305G.D390B 16GB
Kingston KHX2133C11D3/4GX 4GB
Crucial Technology CT8G4SFRA266.M16FG 8GB
AMD R538G1601U2S 8GB
G Skill Intl F4-4400C17-16GTZR 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Crucial Technology BLS16G4D26BFSE.16FD 16GB
A-DATA Technology DDR4 2400 16GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Peak Electronics 256X64M-67E 2GB
Ramaxel Technology RMUA5210ME88HCF-3200 32GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Avant Technology W642GU42J7240N8 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMSX16GX4M2A3200C22 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N
Corsair CMV4GX3M1B1600C11 4GB
Kingston 9905663-006.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Avant Technology J642GU42J7240N4 16GB
Report a bug
×
Bug description
Source link