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Ramos Technology EWB8GB681CA3-16IC 8GB
Samsung M378A2G43MX3-CTD 16GB

Ramos Technology EWB8GB681CA3-16IC 8GB vs Samsung M378A2G43MX3-CTD 16GB

Overall score
star star star star star
Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Overall score
star star star star star
Samsung M378A2G43MX3-CTD 16GB

Samsung M378A2G43MX3-CTD 16GB

Differences Specifications Comments

Differences

Ramos Technology EWB8GB681CA3-16IC 8GB Reasons to consider
Ramos Technology EWB8GB681CA3-16IC 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 33
    Around 24% lower latency
  • Faster reading speed, GB/s
    15.3 left arrow 15.1
    Average value in the tests
Samsung M378A2G43MX3-CTD 16GB Reasons to consider
Samsung M378A2G43MX3-CTD 16GB
Report a bug
  • Faster write speed, GB/s
    11.9 left arrow 9.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Ramos Technology EWB8GB681CA3-16IC 8GB
Samsung M378A2G43MX3-CTD 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 33
  • Read speed, GB/s
    15.3 left arrow 15.1
  • Write speed, GB/s
    9.8 left arrow 11.9
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2646 left arrow 3224

Ramos Technology EWB8GB681CA3-16IC 8GB RAM comparisons

Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EEB8GB681CAE-16IC 8GB

Samsung M378A2G43MX3-CTD 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP112U64CP8-S5 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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