RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3866C18-4GVK 4GB
Compare
Samsung 1600 CL10 Series 8GB vs G Skill Intl F4-3866C18-4GVK 4GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
G Skill Intl F4-3866C18-4GVK 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Reasons to consider
G Skill Intl F4-3866C18-4GVK 4GB
Report a bug
Below the latency in the PassMark tests, ns
19
25
Around -32% lower latency
Faster reading speed, GB/s
19.2
16.1
Average value in the tests
Faster write speed, GB/s
13.5
10.1
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3866C18-4GVK 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
19
Read speed, GB/s
16.1
19.2
Write speed, GB/s
10.1
13.5
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2764
3075
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3866C18-4GVK 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SpecTek Incorporated ?????????????????? 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology BLT2G3D1608DT1TX0 2GB
Transcend Information JM2666HLG-16GK 8GB
Samsung M391B5673EH1-CH9 2GB
Avant Technology W6451U66J5213ND 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3600C14-16GTZRA 16GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB
G Skill Intl F4-4000C18-32GTRS 32GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-3200C14-16GTZN 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Corsair CM4B8G2J2666A15D 8GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston XW21KG-HYD-NX 8GB
Kingston 9905316-106.A02LF 1GB
Corsair CMW16GX4M2K3600C16 8GB
Kingston 99U5474-023.A00LF 4GB
G Skill Intl F4-3200C16-4GVRB 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
Samsung M4 70T2864QZ3-CE6 1GB
Crucial Technology BLS8G4D32AESCK.M8FE 8GB
Samsung M378B5173BH0-CH9 4GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Corsair CM4X8GD3200C16K4 8GB
Report a bug
×
Bug description
Source link