Samsung 1600 CL10 Series 8GB vs G Skill Intl F4-3866C18-4GVK 4GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

G Skill Intl F4-3866C18-4GVK 4GB

G Skill Intl F4-3866C18-4GVK 4GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

G Skill Intl F4-3866C18-4GVK 4GB

需要考虑的原因
G Skill Intl F4-3866C18-4GVK 4GB

报告一个错误

低于PassMark测试中的延时，ns

19 25

左右 -32% 更低的延时
更快的读取速度，GB/s

19.2 16.1

测试中的平均数值
更快的写入速度，GB/s

13.5 10.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-3866C18-4GVK 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 19
读取速度，GB/s

16.1 19.2
写入速度，GB/s

10.1 13.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2764 3075

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-17000CL11-4GBXL 4GB

G Skill Intl F3-17000CL11-4GBXL 4GB

G Skill Intl F4-4266C17-16GVKB 16GB

G Skill Intl F4-4266C17-16GVKB 16GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Wilk Elektronik S.A. GR2133S464L15/8G 8GB

Wilk Elektronik S.A. GR2133S464L15/8G 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Crucial Technology CT4G4SFS8213.C8FBD2 4GB

Crucial Technology CT4G4SFS8213.C8FBD2 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Smart Modular SMS4TDC3C0K0446SCG 4GB

Smart Modular SMS4TDC3C0K0446SCG 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Smart Modular SMS4TDC3C0K0446SCG 4GB

Smart Modular SMS4TDC3C0K0446SCG 4GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology BLT8G4D26BFT4K.C8FD 8GB

Crucial Technology BLT8G4D26BFT4K.C8FD 8GB

Infineon (Siemens) 64T32000HU3.7A 256MB

Infineon (Siemens) 64T32000HU3.7A 256MB

Kingston 9965600-033.A00G 16GB

Kingston 9965600-033.A00G 16GB

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

Golden Empire CL16-16-16 D4-3000 4GB

Golden Empire CL16-16-16 D4-3000 4GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Smart Modular SMS4TDC3C0K0446SCG 4GB

Smart Modular SMS4TDC3C0K0446SCG 4GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

G Skill Intl F4-3200C16-8GTZKW 8GB

G Skill Intl F4-3200C16-8GTZKW 8GB

Nanya Technology M2F4G64CB8HG4N-CG 4GB

Nanya Technology M2F4G64CB8HG4N-CG 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology CT32G4SFD8266.C16FE 32GB

Crucial Technology CT32G4SFD8266.C16FE 32GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Kingston 99U5469-052.A00LF 4GB

Kingston 99U5469-052.A00LF 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB