Samsung 1600 CL10 Series 8GB
Maxsun MSD416G26Q3 16GB

Samsung 1600 CL10 Series 8GB vs Maxsun MSD416G26Q3 16GB

Overall score
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score
star star star star star
Maxsun MSD416G26Q3 16GB

Maxsun MSD416G26Q3 16GB

Differences

  • Below the latency in the PassMark tests, ns
    25 left arrow 84
    Around 70% lower latency
  • Faster reading speed, GB/s
    16.1 left arrow 12.5
    Average value in the tests
  • Faster write speed, GB/s
    10.1 left arrow 7.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Maxsun MSD416G26Q3 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 84
  • Read speed, GB/s
    16.1 left arrow 12.5
  • Write speed, GB/s
    10.1 left arrow 7.0
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2764 left arrow 1486
RAM Latency Calculator
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