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Samsung 1600 CL10 Series 8GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Compare
Samsung 1600 CL10 Series 8GB vs Micron Technology 8ATF1G64AZ-3G2R1 8GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
31
Around 19% lower latency
Reasons to consider
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Report a bug
Faster reading speed, GB/s
16.9
16.1
Average value in the tests
Faster write speed, GB/s
12.4
10.1
Average value in the tests
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
31
Read speed, GB/s
16.1
16.9
Write speed, GB/s
10.1
12.4
Memory bandwidth, mbps
12800
no data
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
, 1.20000005, CAS Supported:
Timings / Clock speed
9-9-9-24 / 1600 MHz
no data
Ranking PassMark (The more the better)
2764
3043
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
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