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Samsung 1600 CL10 Series 8GB
Micron Technology CT8G4DFD8213.16FA11 8GB
Compare
Samsung 1600 CL10 Series 8GB vs Micron Technology CT8G4DFD8213.16FA11 8GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Micron Technology CT8G4DFD8213.16FA11 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
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Below the latency in the PassMark tests, ns
25
28
Around 11% lower latency
Faster reading speed, GB/s
16.1
12
Average value in the tests
Faster write speed, GB/s
10.1
9.1
Average value in the tests
Reasons to consider
Micron Technology CT8G4DFD8213.16FA11 8GB
Report a bug
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Micron Technology CT8G4DFD8213.16FA11 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
28
Read speed, GB/s
16.1
12.0
Write speed, GB/s
10.1
9.1
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2764
2347
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2
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Absolute Latency
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