RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
SK Hynix HMA851U6CJR6N-VK 4GB
Compare
Samsung 1600 CL10 Series 8GB vs SK Hynix HMA851U6CJR6N-VK 4GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
SK Hynix HMA851U6CJR6N-VK 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
32
Around 22% lower latency
Reasons to consider
SK Hynix HMA851U6CJR6N-VK 4GB
Report a bug
Faster reading speed, GB/s
16.8
16.1
Average value in the tests
Faster write speed, GB/s
12.1
10.1
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
SK Hynix HMA851U6CJR6N-VK 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
32
Read speed, GB/s
16.1
16.8
Write speed, GB/s
10.1
12.1
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2764
2641
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
SK Hynix HMA851U6CJR6N-VK 4GB RAM comparisons
G Skill Intl F4-3600C19-8GSXWB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung 1600 CL10 Series 8GB
SK Hynix HMA851U6CJR6N-VK 4GB
A-DATA Technology AD73I1B1672EG 2GB
Micron Technology 18ASF1G72PDZ-2G3B1 8GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3000C16-8GTRG 8GB
Kingston KHX1600C9D3/4G 4GB
G Skill Intl F4-2933C16-16GTZRX 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
Samsung 1600 CL10 Series 8GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
Kingston 9965525-018.A00LF 4GB
InnoDisk Corporation 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Transcend Information TS512MSH64V4H 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BLM16G40C18U4BL.M8FB 16GB
Samsung M386B4G70DM0-CMA4 32GB
G Skill Intl F4-2133C15-8GRR2 8GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
Crucial Technology CT25664AA800.M16FM 2GB
G Skill Intl F4-2133C15-8GVK 8GB
Kingston K531R8-MIN 4GB
Golden Empire CL16-16-16 D4-3200 4GB
Report a bug
×
Bug description
Source link