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Samsung 1600 CL10 Series 8GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Compare
Samsung 1600 CL10 Series 8GB vs Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
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Below the latency in the PassMark tests, ns
25
74
Around 66% lower latency
Faster reading speed, GB/s
16.1
13.6
Average value in the tests
Faster write speed, GB/s
10.1
7.7
Average value in the tests
Reasons to consider
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Report a bug
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
74
Read speed, GB/s
16.1
13.6
Write speed, GB/s
10.1
7.7
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2764
1616
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
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