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Samsung DDR3 8GB 1600MHz 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Samsung DDR3 8GB 1600MHz 8GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Overall score
star star star star star
Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Differences Specifications Comments

Differences

Samsung DDR3 8GB 1600MHz 8GB Reasons to consider
Samsung DDR3 8GB 1600MHz 8GB
Report a bug
  • Faster reading speed, GB/s
    14.9 left arrow 14.6
    Average value in the tests
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 43
    Around -72% lower latency
  • Faster write speed, GB/s
    9.9 left arrow 9.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Samsung DDR3 8GB 1600MHz 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    43 left arrow 25
  • Read speed, GB/s
    14.9 left arrow 14.6
  • Write speed, GB/s
    9.6 left arrow 9.9
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2506 left arrow 2427

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RAM Latency Calculator
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