RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
17.2
Average value in the tests
Reasons to consider
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Report a bug
Faster write speed, GB/s
9.7
2,123.3
Average value in the tests
Higher memory bandwidth, mbps
25600
6400
Around 4 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
59
Read speed, GB/s
4,833.8
17.2
Write speed, GB/s
2,123.3
9.7
Memory bandwidth, mbps
6400
25600
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
731
2181
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KHX318C10FR/8G 8GB
Kingston 9965589-024.D01G 16GB
Kingston ACR256X64D3S1333C9 2GB
Mushkin 99[2/7/4]204F 4GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston 99U5665-004.A00G 4GB
PNY Electronics PNY 2GB
A-DATA Technology AO1P24HC8T1-BPGS 8GB
Kingston 9965525-155.A00LF 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Neo Forza GKE160SO204808-3200 16GB
G Skill Intl F3-1866C8-8GTX 8GB
Kingston HP32D4U8D8HC-16X 16GB
Corsair VSA2GSDS667C4 2GB
Crucial Technology BL8G32C16U4R.M8FE 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMR32GX4M2F3600C18 16GB
Kingston 9905403-444.A00LF 4GB
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
Kingston HP669238-071-HYC 4GB
Corsair CMK16GX4M1B3000C15 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-4266C17-8GTZRB 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-3200C16-8GSX 8GB
Report a bug
×
Bug description
Source link