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Samsung M3 78T2863EHS-CF7 1GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

Samsung M3 78T2863EHS-CF7 1GB vs Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

总分
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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分
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Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

差异 规格 评论

差异

Samsung M3 78T2863EHS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.2
    测试中的平均数值
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB 需要考虑的原因
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
报告一个错误
  • 更快的写入速度，GB/s
    9.7 left arrow 2,123.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2863EHS-CF7 1GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 59
  • 读取速度，GB/s
    4,833.8 left arrow 17.2
  • 写入速度，GB/s
    2,123.3 left arrow 9.7
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    731 left arrow 2181

Samsung M3 78T2863EHS-CF7 1GB RAM的比较

Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8G
内存RAM
Avant Technology F641GU67F9333G 8GB
Avant Technology F641GU67F9333G 8GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Essencore Limited KD48GU880-32N220T 8GB
Essencore Limited KD48GU880-32N220T 8GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Kingston KHX2666C13D4/4GX 4GB
Kingston KHX2666C13D4/4GX 4GB
内存RAM
Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/4GX 4GB
Crucial Technology BL16G36C16U4W.M8FB1 16GB
Crucial Technology BL16G36C16U4W.M8FB1 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Essencore Limited KD48GU880-32N220T 8GB
Essencore Limited KD48GU880-32N220T 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Corsair CMG32GX4M2E3200C16 16GB
Corsair CMG32GX4M2E3200C16 16GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Corsair CMK16GX4M4B3200C16 4GB
Corsair CMK16GX4M4B3200C16 4GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMA81GR7AFR8N-UH 8GB
SK Hynix HMA81GR7AFR8N-UH 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Crucial Technology CT16G4DFD824A.M16FD 16GB
Crucial Technology CT16G4DFD824A.M16FD 16GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Teikon TMA451S6AFR8N-TFSC 4GB
Teikon TMA451S6AFR8N-TFSC 4GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
V-Color Technology Inc. TC416G24D817 16GB
V-Color Technology Inc. TC416G24D817 16GB
内存RAM
G Skill Intl F3-17000CL9-4GBXLD 4GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
G Skill Intl F4-2666C19-16GRS 16GB
G Skill Intl F4-2666C19-16GRS 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Patriot Memory (PDP Systems) PSD44G213381 4GB
Patriot Memory (PDP Systems) PSD44G213381 4GB
内存RAM