RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
A-DATA Technology AE4S240038G17-BHYA 8GB
Compare
Samsung M3 78T3354BZ0-CCC 256MB vs A-DATA Technology AE4S240038G17-BHYA 8GB
Overall score
Samsung M3 78T3354BZ0-CCC 256MB
Overall score
A-DATA Technology AE4S240038G17-BHYA 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
Faster reading speed, GB/s
2
14.2
Average value in the tests
Reasons to consider
A-DATA Technology AE4S240038G17-BHYA 8GB
Report a bug
Below the latency in the PassMark tests, ns
38
46
Around -21% lower latency
Faster write speed, GB/s
10.7
1,519.2
Average value in the tests
Higher memory bandwidth, mbps
19200
3200
Around 6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
A-DATA Technology AE4S240038G17-BHYA 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
38
Read speed, GB/s
2,909.8
14.2
Write speed, GB/s
1,519.2
10.7
Memory bandwidth, mbps
3200
19200
Other
Description
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
3-3-3-12 / 400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
241
2429
Samsung M3 78T3354BZ0-CCC 256MB RAM comparisons
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
A-DATA Technology AE4S240038G17-BHYA 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT2K102464BD160B 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMT325S6CFR8C-PB 2GB
Panram International Corporation PUD43000C154G4NJW 4GB
Corsair CM2X2048-6400C5DHX 2GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
Kingston 9965525-155.A00LF 8GB
Kingston HP26D4U9S8ME-8X 8GB
Kingston 9905471-006.A01LF 4GB
Avant Technology W6451U67J5213NB 4GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
Samsung M378B5773DH0-CH9 2GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
A-DATA Technology ADOVE1A0834E 1GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingston ACR26D4U9D8ME-16 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BL32G32C16S4B.M16FB1 32GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
A-DATA Technology AO1P32NC8T1-BCIS 8GB
Kingston 99U5584-001.A00LF 4GB
G Skill Intl F4-3600C18-8GTZN 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Transcend Information TS2GSH64V1B 16GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMW16GX4M2Z4000C18 8GB
SK Hynix HMT351S6EFR8C-PB 4GB
Kingston SNY1333D3S9ELC/4G 4GB
Report a bug
×
Bug description
Source link