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Samsung M3 78T3354BZ0-CCC 256MB
Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Samsung M3 78T3354BZ0-CCC 256MB vs Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Overall score
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Overall score
star star star star star
Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Differences Specifications Comments

Differences

Samsung M3 78T3354BZ0-CCC 256MB Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
Chun Well Technology Holding Limited MD4U0836165BCW 8GB Reasons to consider
Chun Well Technology Holding Limited MD4U0836165BCW 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    31 left arrow 46
    Around -48% lower latency
  • Faster reading speed, GB/s
    21.4 left arrow 2
    Average value in the tests
  • Faster write speed, GB/s
    16.2 left arrow 1,519.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 3200
    Around 6.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Chun Well Technology Holding Limited MD4U0836165BCW 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    46 left arrow 31
  • Read speed, GB/s
    2,909.8 left arrow 21.4
  • Write speed, GB/s
    1,519.2 left arrow 16.2
  • Memory bandwidth, mbps
    3200 left arrow 21300
Other
  • Description
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    3-3-3-12 / 400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    241 left arrow 3809

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RAM Latency Calculator
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