RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BL8G30C15U4R.M8FE1 8GB
Compare
Samsung M3 78T3354BZ0-CCC 256MB vs Crucial Technology BL8G30C15U4R.M8FE1 8GB
Overall score
Samsung M3 78T3354BZ0-CCC 256MB
Overall score
Crucial Technology BL8G30C15U4R.M8FE1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
Faster reading speed, GB/s
2
17.4
Average value in the tests
Reasons to consider
Crucial Technology BL8G30C15U4R.M8FE1 8GB
Report a bug
Below the latency in the PassMark tests, ns
32
46
Around -44% lower latency
Faster write speed, GB/s
14.5
1,519.2
Average value in the tests
Higher memory bandwidth, mbps
21300
3200
Around 6.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BL8G30C15U4R.M8FE1 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
32
Read speed, GB/s
2,909.8
17.4
Write speed, GB/s
1,519.2
14.5
Memory bandwidth, mbps
3200
21300
Other
Description
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
3-3-3-12 / 400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
241
3385
Samsung M3 78T3354BZ0-CCC 256MB RAM comparisons
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Crucial Technology BL8G30C15U4R.M8FE1 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BL8G30C15U4R.M8FE1 8GB
Nanya Technology M2Y51264TU88A2B-3C 512MB
Micron Technology 72ASS8G72LZ-2G3B2 64GB
Nanya Technology NT1GT64U88D0BY-AD 1GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
G Skill Intl F3-2400C11-8GSR 8GB
SK Hynix HMA84GR7AFR4N-UH 32GB
Nanya Technology M2F2G64CB88B7N-CG 2GB
SK Hynix HMA82GS6CJR8N-UH 16GB
Corsair CMV4GX3M1B1600C11 4GB
G Skill Intl F4-4266C16-8GTZR 8GB
A-DATA Technology DOVF1B163G2G 2GB
Hyundai Inc AR36C18S8K2HU416R 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT8G4DFD824A.C16FF 8GB
Kingston 9905316-106.A02LF 1GB
G Skill Intl F4-3200C14-16GTZ 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Smart Modular SMS4WEC3C0K0446SCG 4GB
Apacer Technology 78.01G86.9H50C 1GB
Heoriady M471A1K43BB1-CRC 16GB
PNY Electronics PNY 2GB
Crucial Technology CT8G4DFD8213.C16FDR2 8GB
Transcend Information TS512MSK64W6H 4GB
Samsung M378A5244CB0-CWE 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS8G4D26BFSE.16FD2 8GB
Report a bug
×
Bug description
Source link