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Samsung M3 78T3354BZ0-CCC 256MB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Samsung M3 78T3354BZ0-CCC 256MB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Overall score
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Overall score
star star star star star
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Differences Specifications Comments

Differences

Samsung M3 78T3354BZ0-CCC 256MB Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
  • Faster reading speed, GB/s
    2 left arrow 16
    Average value in the tests
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    37 left arrow 46
    Around -24% lower latency
  • Faster write speed, GB/s
    12.6 left arrow 1,519.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 3200
    Around 6 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    46 left arrow 37
  • Read speed, GB/s
    2,909.8 left arrow 16.0
  • Write speed, GB/s
    1,519.2 left arrow 12.6
  • Memory bandwidth, mbps
    3200 left arrow 19200
Other
  • Description
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    3-3-3-12 / 400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    241 left arrow 2808

Samsung M3 78T3354BZ0-CCC 256MB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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