RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology CT4G4DFS8213.8FA11 4GB
Compare
Samsung M3 78T3354BZ0-CCC 256MB vs Micron Technology CT4G4DFS8213.8FA11 4GB
Overall score
Samsung M3 78T3354BZ0-CCC 256MB
Overall score
Micron Technology CT4G4DFS8213.8FA11 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
Faster reading speed, GB/s
2
15
Average value in the tests
Reasons to consider
Micron Technology CT4G4DFS8213.8FA11 4GB
Report a bug
Below the latency in the PassMark tests, ns
35
46
Around -31% lower latency
Faster write speed, GB/s
12.0
1,519.2
Average value in the tests
Higher memory bandwidth, mbps
17000
3200
Around 5.31 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology CT4G4DFS8213.8FA11 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
35
Read speed, GB/s
2,909.8
15.0
Write speed, GB/s
1,519.2
12.0
Memory bandwidth, mbps
3200
17000
Other
Description
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
3-3-3-12 / 400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
241
2654
Samsung M3 78T3354BZ0-CCC 256MB RAM comparisons
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Micron Technology CT4G4DFS8213.8FA11 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F2-5300CL4-1GBSA 1GB
Kingston 9965596-031.B00G 8GB
PUSKILL DDR3 1600 8G 8GB
Corsair CMT32GX4M2Z3200C16 16GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3733C17-8GTZKK 8GB
Kingston 9905316-106.A02LF 1GB
Corsair CMD32GX4M2A2666C15 16GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-2133C15-4GRB 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMW16GX4M2D3600C18 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Micron Technology 36ASF2G72LZ-2G1A1 16GB
Crucial Technology CT25664AA800.M16FG 2GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
Samsung M378B5273CH0-CH9 4GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Kingston 99P5471-002.A00LF 2GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3000C14-16GTZR 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Mushkin 99[2/7/4]192[F/T] 4GB
Kingston 9905471-071.A00LF 8GB
Golden Empire CL18-20-20 D4-3200 8GB
Report a bug
×
Bug description
Source link