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Samsung M3 78T5663RZ3-CE6 2GB
Avant Technology W6451U67J5213NB 4GB

Samsung M3 78T5663RZ3-CE6 2GB vs Avant Technology W6451U67J5213NB 4GB

Overall score
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Overall score
star star star star star
Avant Technology W6451U67J5213NB 4GB

Avant Technology W6451U67J5213NB 4GB

Differences Specifications Comments

Differences

Samsung M3 78T5663RZ3-CE6 2GB Reasons to consider
Samsung M3 78T5663RZ3-CE6 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    60 left arrow 76
    Around 21% lower latency
  • Faster reading speed, GB/s
    4 left arrow 14.4
    Average value in the tests
Avant Technology W6451U67J5213NB 4GB Reasons to consider
Avant Technology W6451U67J5213NB 4GB
Report a bug
  • Faster write speed, GB/s
    7.7 left arrow 2,168.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 5300
    Around 3.21 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T5663RZ3-CE6 2GB
Avant Technology W6451U67J5213NB 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    60 left arrow 76
  • Read speed, GB/s
    4,595.2 left arrow 14.4
  • Write speed, GB/s
    2,168.2 left arrow 7.7
  • Memory bandwidth, mbps
    5300 left arrow 17000
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    941 left arrow 1718

Samsung M3 78T5663RZ3-CE6 2GB RAM comparisons

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

Avant Technology W6451U67J5213NB 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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