RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-3000C15-16GTZ 16GB
Compare
Samsung M3 78T5663RZ3-CE6 2GB vs G Skill Intl F4-3000C15-16GTZ 16GB
Overall score
Samsung M3 78T5663RZ3-CE6 2GB
Overall score
G Skill Intl F4-3000C15-16GTZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T5663RZ3-CE6 2GB
Report a bug
Faster reading speed, GB/s
4
17.9
Average value in the tests
Faster write speed, GB/s
2,168.2
13.1
Average value in the tests
Reasons to consider
G Skill Intl F4-3000C15-16GTZ 16GB
Report a bug
Below the latency in the PassMark tests, ns
30
60
Around -100% lower latency
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-3000C15-16GTZ 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
60
30
Read speed, GB/s
4,595.2
17.9
Write speed, GB/s
2,168.2
13.1
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
941
3332
Samsung M3 78T5663RZ3-CE6 2GB RAM comparisons
Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB
G Skill Intl F4-3000C15-16GTZ 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-3600C19-16GTRG 16GB
Kingston 99U5428-063.A00LF 8GB
G Skill Intl F4-3200C16-8GFX 8GB
Kingston 9905471-076.A00LF 8GB
G Skill Intl F4-3600C17-8GTRS 8GB
Kingston 9905403-447.A00LF 4GB
Golden Empire CL16-18-18 D4-3400 4GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-2666C15-8GVR 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3466C16-8GVR 8GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Corsair CM4X8GD3600C18K2D 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Micron Technology 18ASF1G72PDZ-2G3A2 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology CT8G4DFS6266.M4FE 8GB
Team Group Inc. Vulcan-1600 4GB
Micron Technology M471A1K43CB1-CTD 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BL16G32C16U4WL.M16FE 16GB
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-3200C15-4GRKD 4GB
Kingston KHX1600C9D3/8G 8GB
Corsair CM4X8GF2400C16N2 8GB
Report a bug
×
Bug description
Source link