RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T5663RZ3-CE6 2GB
Gloway International (HK) STK4U2400D17042C 4GB
Compare
Samsung M3 78T5663RZ3-CE6 2GB vs Gloway International (HK) STK4U2400D17042C 4GB
Overall score
Samsung M3 78T5663RZ3-CE6 2GB
Overall score
Gloway International (HK) STK4U2400D17042C 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T5663RZ3-CE6 2GB
Report a bug
Faster reading speed, GB/s
4
18
Average value in the tests
Faster write speed, GB/s
2,168.2
13.4
Average value in the tests
Reasons to consider
Gloway International (HK) STK4U2400D17042C 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
60
Around -161% lower latency
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T5663RZ3-CE6 2GB
Gloway International (HK) STK4U2400D17042C 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
60
23
Read speed, GB/s
4,595.2
18.0
Write speed, GB/s
2,168.2
13.4
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
941
2675
Samsung M3 78T5663RZ3-CE6 2GB RAM comparisons
Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB
Gloway International (HK) STK4U2400D17042C 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMT351U6CFR8C-H9 4GB
Crucial Technology BL8G30C15U4B.M8FE1 8GB
Avant Technology F6451U64F9333G 4GB
Kingston 9905701-132.A00G 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Gloway International (HK) STK4U2400D17042C 4GB
Samsung M3 78T2863QZS-CF7 1GB
Kingston 9965662-015.A00G 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston 9905711-007.A00G 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Hynix Semiconductor (Hyundai Electronics) HMT35151BFR8C
Samsung M393A1G40DB0-CPB 8GB
Samsung M471A4G43MB1-CTD 32GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
G Skill Intl F4-3866C18-8GTZSW 8GB
A-DATA Technology VDQVE1B16 2GB
Apacer Technology 78.CAGMT.40C0B 8GB
SK Hynix HYMP512S64CP8-Y5 1GB
Kllisre M471A3243BB0-CP50 16GB
Kingston 99U5701-036.A00G 16GB
Corsair CM5S16GM4800A40K2 16GB
Kingston KHX16LC9/8GX 8GB
Samsung V-GeN D4S8GL24A8 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
V-GEN D4H8GL32A8TS 8GB
Report a bug
×
Bug description
Source link