RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T5663RZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Compare
Samsung M3 78T5663RZ3-CE6 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Overall score
Samsung M3 78T5663RZ3-CE6 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T5663RZ3-CE6 2GB
Report a bug
Faster reading speed, GB/s
4
16.8
Average value in the tests
Faster write speed, GB/s
2,168.2
13.5
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Report a bug
Below the latency in the PassMark tests, ns
26
60
Around -131% lower latency
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T5663RZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
60
26
Read speed, GB/s
4,595.2
16.8
Write speed, GB/s
2,168.2
13.5
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
941
2880
Samsung M3 78T5663RZ3-CE6 2GB RAM comparisons
Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB RAM comparisons
Kingston KN2M64-ETB 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-4200C19-4GTZ 4GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Apacer Technology 78.B1GN3.4032B 4GB
Samsung M3 78T5663RZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
Patriot Memory (PDP Systems) PSD34G16002 4GB
Micron Technology 8ATF1G64AZ-2G6D1 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Micron Technology 16ATF2G64AZ-2G3A1 16GB
Samsung M471B1G73EB0-YK0 8GB
Crucial Technology BLS16G4D32AESE.M16FE 16GB
Kingston 99U5584-007.A00LF 4GB
Corsair CMD8GX4M2B3200C16 4GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology CT8G4SFRA32A.M8FRS 8GB
Kingston 9905584-016.A00LF 4GB
Corsair CMD64GX4M8X4000C19 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Crucial Technology CT8G4SFRA32A.C4FE 8GB
A-DATA Technology AD73I1C1674EV 4GB
Essencore Limited KD4AGU880-32A160T 16GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-3200C15-4GRKD 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Gloway International (HK) STK4U2400D17082C 8GB
Report a bug
×
Bug description
Source link