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Samsung M3 78T5663RZ3-CE6 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Compare
Samsung M3 78T5663RZ3-CE6 2GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Overall score
Samsung M3 78T5663RZ3-CE6 2GB
Overall score
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T5663RZ3-CE6 2GB
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Faster reading speed, GB/s
4
20.5
Average value in the tests
Faster write speed, GB/s
2,168.2
15.5
Average value in the tests
Reasons to consider
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Report a bug
Below the latency in the PassMark tests, ns
31
60
Around -94% lower latency
Higher memory bandwidth, mbps
25600
5300
Around 4.83 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T5663RZ3-CE6 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
60
31
Read speed, GB/s
4,595.2
20.5
Write speed, GB/s
2,168.2
15.5
Memory bandwidth, mbps
5300
25600
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
5-5-5-15 / 667 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
941
3649
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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