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Samsung M3 78T6553CZ3-CD5 512MB
Corsair CM4X4GF2400C14K4 4GB
Compare
Samsung M3 78T6553CZ3-CD5 512MB vs Corsair CM4X4GF2400C14K4 4GB
Overall score
Samsung M3 78T6553CZ3-CD5 512MB
Overall score
Corsair CM4X4GF2400C14K4 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T6553CZ3-CD5 512MB
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Faster reading speed, GB/s
3
16.3
Average value in the tests
Reasons to consider
Corsair CM4X4GF2400C14K4 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
56
Around -143% lower latency
Faster write speed, GB/s
11.9
1,501.2
Average value in the tests
Higher memory bandwidth, mbps
17000
4200
Around 4.05 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T6553CZ3-CD5 512MB
Corsair CM4X4GF2400C14K4 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
56
23
Read speed, GB/s
3,161.0
16.3
Write speed, GB/s
1,501.2
11.9
Memory bandwidth, mbps
4200
17000
Other
Description
PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
Timings / Clock speed
4-4-4-12 / 533 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
381
2629
Samsung M3 78T6553CZ3-CD5 512MB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
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A-DATA Technology AD73I1C1674EV 4GB
Kingston 9905625-036.A00G 16GB
Kingston 9905471-001.A01LF 2GB
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Kingston 9905471-002.A00LF 2GB
Micron Technology 8ATF1G64HZ-2G6B1 8GB
Kingston 9905469-143.A00LF 4GB
Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB
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Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology BL8G32C16U4RL.M8FE1 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMA82GU6MFR8N-TF 16GB
Kingston 9905403-156.A00LF 2GB
Corsair CMK8GX4M1A2400C14 8GB
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