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Samsung M3 78T6553CZ3-CD5 512MB
Gloway International (HK) STK4U2400D17041C 4GB

Samsung M3 78T6553CZ3-CD5 512MB vs Gloway International (HK) STK4U2400D17041C 4GB

Overall score
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Samsung M3 78T6553CZ3-CD5 512MB

Samsung M3 78T6553CZ3-CD5 512MB

Overall score
star star star star star
Gloway International (HK) STK4U2400D17041C 4GB

Gloway International (HK) STK4U2400D17041C 4GB

Differences Specifications Comments

Differences

Samsung M3 78T6553CZ3-CD5 512MB Reasons to consider
Samsung M3 78T6553CZ3-CD5 512MB
Report a bug
  • Below the latency in the PassMark tests, ns
    56 left arrow 71
    Around 21% lower latency
  • Faster reading speed, GB/s
    3 left arrow 15.8
    Average value in the tests
Gloway International (HK) STK4U2400D17041C 4GB Reasons to consider
Gloway International (HK) STK4U2400D17041C 4GB
Report a bug
  • Faster write speed, GB/s
    7.9 left arrow 1,501.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 4200
    Around 4.57 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T6553CZ3-CD5 512MB
Gloway International (HK) STK4U2400D17041C 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    56 left arrow 71
  • Read speed, GB/s
    3,161.0 left arrow 15.8
  • Write speed, GB/s
    1,501.2 left arrow 7.9
  • Memory bandwidth, mbps
    4200 left arrow 19200
Other
  • Description
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    4-4-4-12 / 533 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    381 left arrow 1757

Samsung M3 78T6553CZ3-CD5 512MB RAM comparisons

Kingston KVR800D2N6/2G 2GB
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Gloway International (HK) STK4U2400D17041C 4GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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