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Samsung M3 91T2953GZ3-CF7 1GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Samsung M3 91T2953GZ3-CF7 1GB vs Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Overall score
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Samsung M3 91T2953GZ3-CF7 1GB

Samsung M3 91T2953GZ3-CF7 1GB

Overall score
star star star star star
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Differences Specifications Comments

Differences

Samsung M3 91T2953GZ3-CF7 1GB Reasons to consider
Samsung M3 91T2953GZ3-CF7 1GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 18.1
    Average value in the tests
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB Reasons to consider
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 52
    Around -86% lower latency
  • Faster write speed, GB/s
    14.8 left arrow 1,906.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 6400
    Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 91T2953GZ3-CF7 1GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    52 left arrow 28
  • Read speed, GB/s
    4,672.4 left arrow 18.1
  • Write speed, GB/s
    1,906.4 left arrow 14.8
  • Memory bandwidth, mbps
    6400 left arrow 17000
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    698 left arrow 3564

Samsung M3 91T2953GZ3-CF7 1GB RAM comparisons

Samsung M3 91T2953EZ3-CF7 1GB
Samsung M3 78T2953GZ3-CF7 1GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB RAM comparisons

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