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Samsung M3 91T2953GZ3-CF7 1GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Samsung M3 91T2953GZ3-CF7 1GB vs Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

总分
star star star star star
Samsung M3 91T2953GZ3-CF7 1GB

Samsung M3 91T2953GZ3-CF7 1GB

总分
star star star star star
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

差异 规格 评论

差异

Samsung M3 91T2953GZ3-CF7 1GB 需要考虑的原因
Samsung M3 91T2953GZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 18.1
    测试中的平均数值
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB 需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 52
    左右 -86% 更低的延时
  • 更快的写入速度，GB/s
    14.8 left arrow 1,906.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 91T2953GZ3-CF7 1GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 28
  • 读取速度，GB/s
    4,672.4 left arrow 18.1
  • 写入速度，GB/s
    1,906.4 left arrow 14.8
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    698 left arrow 3564

Samsung M3 91T2953GZ3-CF7 1GB RAM的比较

Samsung M3 91T2953EZ3-CF7 1GB
Samsung M3 78T2953GZ3-CF7 1GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB RAM的比较

G Skill Intl F3-10600CL9-2GBNT 2GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 91T2953GZ3-CF7 1GB
Samsung M3 91T2953GZ3-CF7 1GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Patriot Memory (PDP Systems) PSD48G26662 8GB
Patriot Memory (PDP Systems) PSD48G26662 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology BLE8G4D30AEEA.K16FE 8GB
Crucial Technology BLE8G4D30AEEA.K16FE 8GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Corsair CMT32GX4M2C3600C18 16GB
Corsair CMT32GX4M2C3600C18 16GB
内存RAM
Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
Corsair CMD64GX4M8A2800C16 8GB
Corsair CMD64GX4M8A2800C16 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB
内存RAM
Strontium EVMT8G1600U86S 8GB
Strontium EVMT8G1600U86S 8GB
Crucial Technology BL16G26C16U4B.16FE 16GB
Crucial Technology BL16G26C16U4B.16FE 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston ACR26D4S9S1KA-4 4GB
Kingston ACR26D4S9S1KA-4 4GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Corsair CMW16GX4M1Z3200C16 16GB
Corsair CMW16GX4M1Z3200C16 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Corsair CMK16GX4M2Z4000C18 8GB
Corsair CMK16GX4M2Z4000C18 8GB
内存RAM
Samsung M378B5173EB0-CK0 4GB
Samsung M378B5173EB0-CK0 4GB
Corsair CMG64GX4M2D3600C18 32GB
Corsair CMG64GX4M2D3600C18 32GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
SK Hynix HMA81GU6AFR8N-UH 8GB
SK Hynix HMA81GU6AFR8N-UH 8GB
内存RAM