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Samsung M3 93T5750CZA-CE6 2GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
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Faster reading speed, GB/s
3
10.5
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
Report a bug
Below the latency in the PassMark tests, ns
35
77
Around -120% lower latency
Faster write speed, GB/s
8.1
2,622.0
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
35
Read speed, GB/s
3,405.2
10.5
Write speed, GB/s
2,622.0
8.1
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
763
1998
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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