RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Chun Well Technology Holding Limited D4U0826190B 8GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Chun Well Technology Holding Limited D4U0826190B 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
16.7
Average value in the tests
Faster write speed, GB/s
2,622.0
12.9
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited D4U0826190B 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
77
Around -166% lower latency
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
29
Read speed, GB/s
3,405.2
16.7
Write speed, GB/s
2,622.0
12.9
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
763
3273
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Chun Well Technology Holding Limited D4U0826190B 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SpecTek Incorporated PSD34G13332 4GB
Mushkin 99[2/7/4]209F 8GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT8G4DFD8213.M16FA 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
Crucial Technology CT8G4DFS824A.C8FBR1 8GB
Corsair CMX8GX3M2A2000C9 4GB
Apacer Technology GD2.1831WS.002 16GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
Samsung M471B5673FH0-CH9 2GB
PNY Electronics PNY 2GB
Corsair CMW32GX4M4A2666C16 8GB
Samsung M471B1G73QH0-YK0 8GB
Corsair CMD16GX4M4A2800C16 4GB
Samsung M393B5270CH0-CH9 4GB
Wilk Elektronik S.A. GR2666D464L19S/4G 4GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
Corsair CMU32GX4M2C3000C16 16GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Kllisre 8ATF1G64AZ-2G6H1 8GB
Kingston 9965525-058.A00LF 8GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Mushkin 991586 2GB
Micron Technology CT8G4DFD8213.16FA11 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Kingston 9905700-026.A00G 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology CT4G4SFS8213.C8FBR2 4GB
Report a bug
×
Bug description
Source link