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Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C17-4GTZ 4GB

Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-3600C17-4GTZ 4GB

Overall score
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Overall score
star star star star star
G Skill Intl F4-3600C17-4GTZ 4GB

G Skill Intl F4-3600C17-4GTZ 4GB

Differences Specifications Comments

Differences

Samsung M3 93T5750CZA-CE6 2GB Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 21
    Average value in the tests
  • Faster write speed, GB/s
    2,622.0 left arrow 17.7
    Average value in the tests
G Skill Intl F4-3600C17-4GTZ 4GB Reasons to consider
G Skill Intl F4-3600C17-4GTZ 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    22 left arrow 77
    Around -250% lower latency
  • Higher memory bandwidth, mbps
    17000 left arrow 5300
    Around 3.21 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C17-4GTZ 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    77 left arrow 22
  • Read speed, GB/s
    3,405.2 left arrow 21.0
  • Write speed, GB/s
    2,622.0 left arrow 17.7
  • Memory bandwidth, mbps
    5300 left arrow 17000
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    763 left arrow 3987

Samsung M3 93T5750CZA-CE6 2GB RAM comparisons

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

G Skill Intl F4-3600C17-4GTZ 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C17-4GTZ 4GB
G Skill Intl F4-3600C17-4GTZ 4GB
Memory RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLT4G4D26AFTA.8FBD 4GB
Crucial Technology BLT4G4D26AFTA.8FBD 4GB
Memory RAM
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Samsung M3 78T2863QZS-CF7 1GB
Kingston 9905630-063.A00G 16GB
Kingston 9905630-063.A00G 16GB
Memory RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
INTENSO M418039 8GB
INTENSO M418039 8GB
Memory RAM
Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/4GX 4GB
G Skill Intl F4-3600C14-16GTRS 16GB
G Skill Intl F4-3600C14-16GTRS 16GB
Memory RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston 9905678-023.A00G 8GB
Kingston 9905678-023.A00G 8GB
Memory RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Crucial Technology CB8GU2400.C8JT 8GB
Crucial Technology CB8GU2400.C8JT 8GB
Memory RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Memory RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Panram International Corporation W4N2666PS-16G 16GB
Panram International Corporation W4N2666PS-16G 16GB
Memory RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Transcend Information TS512MSH64V1H 4GB
Transcend Information TS512MSH64V1H 4GB
Memory RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Golden Empire CL18-20-20 D4-3000 8GB
Golden Empire CL18-20-20 D4-3000 8GB
Memory RAM
Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
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Kingston KHX2800C14D4/8GX 8GB
Memory RAM
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Kingston K531R8-MIN 4GB
Teclast TLD416G26A30 16GB
Teclast TLD416G26A30 16GB
Memory RAM
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Kingston 99P5474-014.A00LF 4GB
Apacer Technology D22.23263S.002 16GB
Apacer Technology D22.23263S.002 16GB
Memory RAM