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Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C17-4GTZ 4GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-3600C17-4GTZ 4GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
G Skill Intl F4-3600C17-4GTZ 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
21
测试中的平均数值
更快的写入速度,GB/s
2,622.0
17.7
测试中的平均数值
需要考虑的原因
G Skill Intl F4-3600C17-4GTZ 4GB
报告一个错误
低于PassMark测试中的延时,ns
22
77
左右 -250% 更低的延时
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C17-4GTZ 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
22
读取速度,GB/s
3,405.2
21.0
写入速度,GB/s
2,622.0
17.7
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
763
3987
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
G Skill Intl F4-3600C17-4GTZ 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 16JTF51264HZ-1G6M1 4GB
Ramaxel Technology RMSA3260MH78H8H-2666 8GB
SK Hynix HMT425S6AFR6A-PB 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
SK Hynix HYMP112U64CP8-S5 1GB
Avant Technology J642GU42J9266N2 16GB
Kingston 9905403-061.A00LF 2GB
Kingston HP32D4U8S8HC-8XR 8GB
SK Hynix HMT451U7BFR8C-RD 4GB
Kingston 99U5663-006.A00G 16GB
Kingston 99U5403-036.A00G 4GB
Corsair CMT64GX4M4Z3600C18 16GB
PNY Electronics 4GBH2X02E99927-16 4GB
G Skill Intl F4-2933C16-16GTZRX 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston 9905743-034.A00G 8GB
Kingston KN2M64-ETB 8GB
Crucial Technology BLT4G4D30AETA.K8FD 4GB
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT8G4DFS832A.M8FJ 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Kingston 9905403-038.A00LF 4GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
Kingston 9905403-174.A00LF 2GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
报告一个错误
×
Bug description
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