Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-3600C17-4GTZ 4GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

G Skill Intl F4-3600C17-4GTZ 4GB

G Skill Intl F4-3600C17-4GTZ 4GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 21

测试中的平均数值
更快的写入速度，GB/s

2,622.0 17.7

测试中的平均数值

G Skill Intl F4-3600C17-4GTZ 4GB

需要考虑的原因
G Skill Intl F4-3600C17-4GTZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 77

左右 -250% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3600C17-4GTZ 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 22
读取速度，GB/s

3,405.2 21.0
写入速度，GB/s

2,622.0 17.7
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 3987

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Patriot Memory (PDP Systems) 2666 C18 Series 16GB

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Kingston KHX1600C9D3/8G 8GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Crucial Technology BL8G24C16U4B.8FB 8GB

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Micron Technology 36ASF4G72LZ-2G3A1 32GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Kingston 9905403-515.A00LF 8GB

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Avant Technology W642GU42J7240N8 16GB

Avant Technology W642GU42J7240N8 16GB

Kingston 99U5458-008.A00LF 4GB

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Crucial Technology BLS16G4D240FSE.16FAD 16GB

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Kingston KHX1600C10D3/8GXF 8GB

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