RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C17-8GTZ 8GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-3600C17-8GTZ 8GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
G Skill Intl F4-3600C17-8GTZ 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
18
Average value in the tests
Faster write speed, GB/s
2,622.0
13.9
Average value in the tests
Reasons to consider
G Skill Intl F4-3600C17-8GTZ 8GB
Report a bug
Below the latency in the PassMark tests, ns
27
77
Around -185% lower latency
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C17-8GTZ 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
27
Read speed, GB/s
3,405.2
18.0
Write speed, GB/s
2,622.0
13.9
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
763
3429
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
G Skill Intl F4-3600C17-8GTZ 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C17-8GTZ 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
SK Hynix HMAA2GU6CJR8N-XN 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-2133C15-16GRS 16GB
A-DATA Technology AD73I1B1672EG 2GB
SK Hynix HMA81GR7AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Corsair CMR32GX4M4D3200C16 8GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-3600C16-8GTESC 8GB
G Skill Intl F5-6400J3239G16G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
Unifosa Corporation HU564404EP0200 4GB
G Skill Intl F4-3600C19-8GSXK 8GB
Kingston KHX3200C18D4/8G 8GB
Kingston 9905625-030.A00G 8GB
Kingston 9905316-106.A02LF 1GB
Corsair CM4X8GF2666C16K4 8GB
Samsung M3 93T5750CZA-CE6 2GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
PNY Electronics PNY 2GB
V-Color Technology Inc. TD416G26D819-VC 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M378A5143DB0-CPB 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F4-2666C18-8GTZR 8GB
Report a bug
×
Bug description
Source link