RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Gloway International (HK) STK2400CL17SNB16GB 16GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Gloway International (HK) STK2400CL17SNB16GB 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
17.5
Average value in the tests
Faster write speed, GB/s
2,622.0
13.2
Average value in the tests
Reasons to consider
Gloway International (HK) STK2400CL17SNB16GB 16GB
Report a bug
Below the latency in the PassMark tests, ns
23
77
Around -235% lower latency
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
23
Read speed, GB/s
3,405.2
17.5
Write speed, GB/s
2,622.0
13.2
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
763
3171
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Gloway International (HK) STK2400CL17SNB16GB 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-3200C16-16GFX 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3866C18-4GVK 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M471A1G43EB1-CRC 8GB
Kingston KHX1600C9S3L/4G 4GB
Crucial Technology CT16G4DFD8266.C16FJ 16GB
Samsung M3 93T5750CZA-CE6 2GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
SK Hynix HMA81GU6CJR8N-UH 8GB
Kingston KHX1600C9D3/8G 8GB
Apacer Technology GD2.1542WS.001 8GB
Kingston 9965662-016.A00G 16GB
Kingston 99U5701-003.A00G 16GB
Kingston 99U5584-004.A00LF 4GB
Kingston KHX2400C15S4/16G 16GB
Kingston 9965525-155.A00LF 8GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston ACR26D4U9S8ME-8 8GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-2666C18-32GTZN 32GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905702-020.A00G 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Jinyu 16GB
Report a bug
×
Bug description
Source link