RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Micron Technology 4ATF51264HZ-2G3E2 4GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Micron Technology 4ATF51264HZ-2G3E2 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
15.8
Average value in the tests
Faster write speed, GB/s
2,622.0
12.2
Average value in the tests
Reasons to consider
Micron Technology 4ATF51264HZ-2G3E2 4GB
Report a bug
Below the latency in the PassMark tests, ns
29
77
Around -166% lower latency
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
29
Read speed, GB/s
3,405.2
15.8
Write speed, GB/s
2,622.0
12.2
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
763
2865
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Micron Technology 4ATF51264HZ-2G3E2 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-444.A00LF 4GB
Lenovo LMKUFG68AHFHD-32A 16GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905678-156.A00G 8GB
SK Hynix HYMP112U64CP8-Y5 1GB
Panram International Corporation W4N2400PS-8G 8GB
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-3466C16-4GTZ 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9905711-007.A00G 4GB
AMD R534G1601U1S-UO 4GB
G Skill Intl F4-4800C18-8GTRS 8GB
Kingston 9905469-143.A00LF 4GB
G Skill Intl F4-3600C16-8GTZN 8GB
Corsair CML16GX3M2A1600C10 8GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Samsung M471B5273CH0-CH9 4GB
Kingston 9905624-044.A00G 8GB
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386A8K40BMB-CPB 64GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-3200C16-4GVK 4GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston 99U5712-009.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3000C15-4GVSB 4GB
AMD R538G1601U2S-UO 8GB
G Skill Intl F4-2933C16-16GFX 16GB
Report a bug
×
Bug description
Source link