RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Micron Technology 8ATF51264AZ-2G1B1 4GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Micron Technology 8ATF51264AZ-2G1B1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
15.8
Average value in the tests
Faster write speed, GB/s
2,622.0
11.8
Average value in the tests
Reasons to consider
Micron Technology 8ATF51264AZ-2G1B1 4GB
Report a bug
Below the latency in the PassMark tests, ns
29
77
Around -166% lower latency
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
29
Read speed, GB/s
3,405.2
15.8
Write speed, GB/s
2,622.0
11.8
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
763
2711
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Micron Technology 8ATF51264AZ-2G1B1 4GB RAM comparisons
Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5584-001.A00LF 4GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Kingston KHX2400C11D3/4GX 4GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Samsung M393B1K70CH0-YH9 8GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
Kingston 9905403-011.A03LF 2GB
Corsair CMK16GX4M2D2666C16 8GB
SK Hynix HMT425S6CFR6A-PB 2GB
Kingston 9905625-076.A00G 8GB
Kingston KHX2133C11D3/4GX 4GB
V-GEN D4M8GL26A8TS6 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology BL16G32C16S4B.M16FE 16GB
A-DATA Technology DDR3 1600 4GB
G Skill Intl F4-3600C16-16GTRG 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
SK Hynix HMA82GR8AMR4N-TF 16GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMSX32GX4M2A3000C16 16GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-3300C16-4GRRD 4GB
Crucial Technology CT25664BA160B.C16F 2GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
Report a bug
×
Bug description
Source link