RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology AFLD416EH1P 16GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Micron Technology AFLD416EH1P 16GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Micron Technology AFLD416EH1P 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
13.7
Average value in the tests
Reasons to consider
Micron Technology AFLD416EH1P 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
77
Around -175% lower latency
Faster write speed, GB/s
6.9
2,622.0
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology AFLD416EH1P 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
28
Read speed, GB/s
3,405.2
13.7
Write speed, GB/s
2,622.0
6.9
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
763
2312
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Micron Technology AFLD416EH1P 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Smart Modular SH564128FH8NZQNSCG 4GB
AMD R948G3206U2S 8GB
Mushkin 991988 (996988) 4GB
Corsair CMU64GX4M4C3000C15 16GB
Samsung M393B5170FH0-CK0 4GB
Kingmax Semiconductor GSAH22F-18---------- 16GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMK8GX4M2D2666C16 4GB
SK Hynix HYMP112U64CP8-Y5 1GB
Corsair CMD32GX4M4C3000C15 8GB
AMD R5S38G1601U2S 8GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Corsair VSA2GSDS667C4 2GB
Kingston HP32D4U2S1ME-8 8GB
Elpida EBJ40UG8EFU0-GN-F 4GB
ASint Technology SLA304G08-EDJ1B 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4DFD8213.C16FBD1 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Corsair CMD16GX4M2A2400C14 8GB
SK Hynix HMT425S6AFR6A-PB 2GB
G Skill Intl F4-2933C14-16GFX 16GB
SK Hynix HYMP112U64CP8-Y5 1GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
Kingston KHX1600C9S3L/4G 4GB
Crucial Technology CT16G4SFD832A.C16FP 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Kingston KF3000C16D4/32GX 32GB
Report a bug
×
Bug description
Source link