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Samsung M3 93T5750CZA-CE6 2GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Samsung M3 93T5750CZA-CE6 2GB vs Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Overall score
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Overall score
star star star star star
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Differences Specifications Comments

Differences

Samsung M3 93T5750CZA-CE6 2GB Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 14.3
    Average value in the tests
  • Faster write speed, GB/s
    2,622.0 left arrow 10.7
    Average value in the tests
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB Reasons to consider
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 77
    Around -208% lower latency
  • Higher memory bandwidth, mbps
    19200 left arrow 5300
    Around 3.62 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    77 left arrow 25
  • Read speed, GB/s
    3,405.2 left arrow 14.3
  • Write speed, GB/s
    2,622.0 left arrow 10.7
  • Memory bandwidth, mbps
    5300 left arrow 19200
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    763 left arrow 2583

Samsung M3 93T5750CZA-CE6 2GB RAM comparisons

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL16G32C16U4B.16FE 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Memory RAM
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Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3600C19-8GTZRB 8GB
G Skill Intl F4-3600C19-8GTZRB 8GB
Memory RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
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Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Essencore Limited KD48GU880-34A170X 8GB
Essencore Limited KD48GU880-34A170X 8GB
Memory RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Corsair CMK32GX4M4B3600C16 8GB
Corsair CMK32GX4M4B3600C16 8GB
Memory RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4000C15-8GTZR 8GB
G Skill Intl F4-4000C15-8GTZR 8GB
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SK Hynix HYMP112U64CP8-S6 1GB
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PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
INTENSO 5641160 8GB
INTENSO 5641160 8GB
Memory RAM
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Samsung M471B5173QH0-YK0 4GB
Kingston 9905744-023.A00G 16GB
Kingston 9905744-023.A00G 16GB
Memory RAM
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Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
Memory RAM
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SK Hynix HYMP164U64CP6-Y5 512MB
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Kingston 9905711-002.A00G 4GB
Memory RAM
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Kingston KTC1G-UDIMM 1GB
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Kingston KHX2133C14D4/4G 4GB
Memory RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Memory RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
Memory RAM