RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
en
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M3 93T5750CZA-CE6 2GB
Samsung M378A2K43EB1-CWE 16GB

Samsung M3 93T5750CZA-CE6 2GB vs Samsung M378A2K43EB1-CWE 16GB

Overall score
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Overall score
star star star star star
Samsung M378A2K43EB1-CWE 16GB

Samsung M378A2K43EB1-CWE 16GB

Differences Specifications Comments

Differences

Samsung M3 93T5750CZA-CE6 2GB Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 18.5
    Average value in the tests
  • Faster write speed, GB/s
    2,622.0 left arrow 13.8
    Average value in the tests
Samsung M378A2K43EB1-CWE 16GB Reasons to consider
Samsung M378A2K43EB1-CWE 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    33 left arrow 77
    Around -133% lower latency
  • Higher memory bandwidth, mbps
    25600 left arrow 5300
    Around 4.83 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Samsung M378A2K43EB1-CWE 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    77 left arrow 33
  • Read speed, GB/s
    3,405.2 left arrow 18.5
  • Write speed, GB/s
    2,622.0 left arrow 13.8
  • Memory bandwidth, mbps
    5300 left arrow 25600
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    763 left arrow 3341

Samsung M3 93T5750CZA-CE6 2GB RAM comparisons

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Samsung M378A2K43EB1-CWE 16GB RAM comparisons

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons

Elpida EBE21UE8ACUA-8G-E 2GB
Elpida EBE21UE8ACUA-8G-E 2GB
Corsair CMRX8GD3000C16R4D 8GB
Corsair CMRX8GD3000C16R4D 8GB
Memory RAM
SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
Samsung M378A1K43CB2-CTD 8GB
Samsung M378A1K43CB2-CTD 8GB
Memory RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kingston 8ATF1G64AZ-2G3A1 8GB
Kingston 8ATF1G64AZ-2G3A1 8GB
Memory RAM
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Kingston 9965596-023.B01G 8GB
Kingston 9965596-023.B01G 8GB
Memory RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
Memory RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
EVGA 16G-D4-2400-MR 8GB
EVGA 16G-D4-2400-MR 8GB
Memory RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
Corsair MK16GX44B3000C15 4GB
Corsair MK16GX44B3000C15 4GB
Memory RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Samsung M393A1K43BB1-CTD 8GB
Samsung M393A1K43BB1-CTD 8GB
Memory RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Samsung M378A2K43EB1-CWE 16GB
Samsung M378A2K43EB1-CWE 16GB
Memory RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
Memory RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Corsair CMT64GX4M8X3600C18 8GB
Corsair CMT64GX4M8X3600C18 8GB
Memory RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Corsair CMK32GX4M4K4000C19 8GB
Corsair CMK32GX4M4K4000C19 8GB
Memory RAM
Kingston 99U5403-465.A00LF 8GB
Kingston 99U5403-465.A00LF 8GB
Kllisre 0000 8GB
Kllisre 0000 8GB
Memory RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-2400C16-16GFX 16GB
G Skill Intl F4-2400C16-16GFX 16GB
Memory RAM