RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
20.4
Average value in the tests
Faster write speed, GB/s
2,622.0
17.2
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Report a bug
Below the latency in the PassMark tests, ns
18
77
Around -328% lower latency
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
18
Read speed, GB/s
3,405.2
20.4
Write speed, GB/s
2,622.0
17.2
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
763
3814
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Corsair CM2X1024-8500C5D 1GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
Samsung M3 93T5750CZA-CE6 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Patriot Memory (PDP Systems) PSD44G240081S 4GB
Kingston HP669238-071-HYC 4GB
G Skill Intl F4-3200C16-32GVK 32GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Crucial Technology BLS16G4D26BFSC.16FD 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT4G4SFS824A.M8FB 4GB
Kingston 9905403-134.A00LF 2GB
V-Color Technology Inc. TC416G24D817 16GB
Crucial Technology CT51264AC800.C16FC 4GB
Transcend Information JM2666HSE-16G 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology 78.CAGPN.DF40B 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Transcend Information TS512MSK64W6H 4GB
Wilk Elektronik S.A. GY2666D464L16/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology 8G4US2400.M8B1 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
Report a bug
×
Bug description
Source link