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Samsung M323R2GA3BB0-CQKOD 16GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
Compare
Samsung M323R2GA3BB0-CQKOD 16GB vs Micron Technology 8ATF1G64HZ-3G2E1 8GB
Overall score
Samsung M323R2GA3BB0-CQKOD 16GB
Overall score
Micron Technology 8ATF1G64HZ-3G2E1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M323R2GA3BB0-CQKOD 16GB
Report a bug
Reasons to consider
Micron Technology 8ATF1G64HZ-3G2E1 8GB
Report a bug
Below the latency in the PassMark tests, ns
23
25
Around -9% lower latency
Faster reading speed, GB/s
17
13.4
Average value in the tests
Faster write speed, GB/s
13.4
12.1
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M323R2GA3BB0-CQKOD 16GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
Main characteristics
Memory type
DDR5
DDR4
Latency in PassMark, ns
25
23
Read speed, GB/s
13.4
17.0
Write speed, GB/s
12.1
13.4
Memory bandwidth, mbps
19200
25600
Other
Description
PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
Timings / Clock speed
no data / 2400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
3419
2936
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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