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Samsung M378A1G43DB0-CPB 8GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
Compare
Samsung M378A1G43DB0-CPB 8GB vs Micron Technology 9ASF51272PZ-2G1AX 4GB
Overall score
Samsung M378A1G43DB0-CPB 8GB
Overall score
Micron Technology 9ASF51272PZ-2G1AX 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A1G43DB0-CPB 8GB
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Below the latency in the PassMark tests, ns
36
39
Around 8% lower latency
Faster reading speed, GB/s
15
7.7
Average value in the tests
Faster write speed, GB/s
10.3
6.8
Average value in the tests
Reasons to consider
Micron Technology 9ASF51272PZ-2G1AX 4GB
Report a bug
Specifications
Complete list of technical specifications
Samsung M378A1G43DB0-CPB 8GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
36
39
Read speed, GB/s
15.0
7.7
Write speed, GB/s
10.3
6.8
Memory bandwidth, mbps
17000
17000
Other
Description
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2569
1768
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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