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Samsung M378A1G43DB0-CPB 8GB
Micron Technology 9ASF51272PZ-2G1AX 4GB

Samsung M378A1G43DB0-CPB 8GB vs Micron Technology 9ASF51272PZ-2G1AX 4GB

总分
star star star star star
Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分
star star star star star
Micron Technology 9ASF51272PZ-2G1AX 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

差异 规格 评论

差异

Samsung M378A1G43DB0-CPB 8GB 需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 39
    左右 8% 更低的延时
  • 更快的读取速度，GB/s
    15 left arrow 7.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.3 left arrow 6.8
    测试中的平均数值
Micron Technology 9ASF51272PZ-2G1AX 4GB 需要考虑的原因
Micron Technology 9ASF51272PZ-2G1AX 4GB
报告一个错误

规格

完整的技术规格清单
Samsung M378A1G43DB0-CPB 8GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 39
  • 读取速度，GB/s
    15.0 left arrow 7.7
  • 写入速度，GB/s
    10.3 left arrow 6.8
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2569 left arrow 1768

Samsung M378A1G43DB0-CPB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB RAM的比较

Crucial Technology CT2K102464BD160B 8GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
EVGA 16G-D4-2400-MR 8GB
EVGA 16G-D4-2400-MR 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Chun Well Technology Holding Limited D4U0830160B 8GB
Chun Well Technology Holding Limited D4U0830160B 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Kingston KP6FH5-MIE 32GB
Kingston KP6FH5-MIE 32GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Apacer Technology GD2.0918CT.001 4GB
Apacer Technology GD2.0918CT.001 4GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMW16GX4M2A2666C16 8GB
Corsair CMW16GX4M2A2666C16 8GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Corsair CMU32GX4M2A2400C14 16GB
Corsair CMU32GX4M2A2400C14 16GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston KHX2400C12D4/8GX 8GB
Kingston KHX2400C12D4/8GX 8GB
内存RAM
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Teikon TMA851S6AFR6N-UHHC 4GB
Teikon TMA851S6AFR6N-UHHC 4GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston 9905711-015.A00G 4GB
Kingston 9905711-015.A00G 4GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology CT16G4DFD824A.M16FB 16GB
Crucial Technology CT16G4DFD824A.M16FB 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Apacer Technology 78.C2GF2.AU00B 8GB
Apacer Technology 78.C2GF2.AU00B 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Corsair CMSX16GX4M2A2666C18 8GB
Corsair CMSX16GX4M2A2666C18 8GB
内存RAM