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Samsung M378A1K43EB2-CWE 8GB
AMD R9S48G3206U2S 8GB

Samsung M378A1K43EB2-CWE 8GB vs AMD R9S48G3206U2S 8GB

Overall score
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Overall score
star star star star star
AMD R9S48G3206U2S 8GB

AMD R9S48G3206U2S 8GB

Differences Specifications Comments

Differences

Samsung M378A1K43EB2-CWE 8GB Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    33 left arrow 37
    Around 11% lower latency
  • Higher memory bandwidth, mbps
    25600 left arrow 19200
    Around 1.33% higher bandwidth
AMD R9S48G3206U2S 8GB Reasons to consider
AMD R9S48G3206U2S 8GB
Report a bug
  • Faster reading speed, GB/s
    20.6 left arrow 17.6
    Average value in the tests
  • Faster write speed, GB/s
    13.9 left arrow 12.0
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M378A1K43EB2-CWE 8GB
AMD R9S48G3206U2S 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    33 left arrow 37
  • Read speed, GB/s
    17.6 left arrow 20.6
  • Write speed, GB/s
    12.0 left arrow 13.9
  • Memory bandwidth, mbps
    25600 left arrow 19200
Other
  • Description
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2910 left arrow 3518

Samsung M378A1K43EB2-CWE 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

AMD R9S48G3206U2S 8GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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