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Samsung M378A1K43EB2-CWE 8GB
Inmos + 256MB

Samsung M378A1K43EB2-CWE 8GB vs Inmos + 256MB

Overall score
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Overall score
star star star star star
Inmos + 256MB

Inmos + 256MB

Differences Specifications Comments

Differences

Samsung M378A1K43EB2-CWE 8GB Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
  • Faster reading speed, GB/s
    17.6 left arrow 11.5
    Average value in the tests
  • Faster write speed, GB/s
    12.0 left arrow 9.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 16800
    Around 1.52% higher bandwidth
Inmos + 256MB Reasons to consider
Inmos + 256MB
Report a bug
  • Below the latency in the PassMark tests, ns
    30 left arrow 33
    Around -10% lower latency

Specifications

Complete list of technical specifications
Samsung M378A1K43EB2-CWE 8GB
Inmos + 256MB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    33 left arrow 30
  • Read speed, GB/s
    17.6 left arrow 11.5
  • Write speed, GB/s
    12.0 left arrow 9.1
  • Memory bandwidth, mbps
    25600 left arrow 16800
Other
  • Description
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • Timings / Clock speed
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow no data
  • Ranking PassMark (The more the better)
    2910 left arrow 2318

Samsung M378A1K43EB2-CWE 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Inmos + 256MB RAM comparisons

Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
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