Samsung M378B5273CH0-CH9 4GB vs Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Overall score

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Overall score

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Differences Specifications Comments

Differences

Samsung M378B5273CH0-CH9 4GB

Reasons to consider
Samsung M378B5273CH0-CH9 4GB

Faster write speed, GB/s

8.4 7.3

Average value in the tests

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Reasons to consider
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Below the latency in the PassMark tests, ns

23 37

Around -61% lower latency
Faster reading speed, GB/s

14.4 13.2

Average value in the tests
Higher memory bandwidth, mbps

17000 10600

Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M378B5273CH0-CH9 4GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

37 23
Read speed, GB/s

13.2 14.4
Write speed, GB/s

8.4 7.3
Memory bandwidth, mbps

10600 17000

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

2143 2236

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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