RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5273CH0-CH9 4GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
Compare
Samsung M378B5273CH0-CH9 4GB vs Netac Technology Co Ltd EKBLUE4162417AD 8GB
Overall score
Samsung M378B5273CH0-CH9 4GB
Overall score
Netac Technology Co Ltd EKBLUE4162417AD 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5273CH0-CH9 4GB
Report a bug
Reasons to consider
Netac Technology Co Ltd EKBLUE4162417AD 8GB
Report a bug
Below the latency in the PassMark tests, ns
24
37
Around -54% lower latency
Faster reading speed, GB/s
16.8
13.2
Average value in the tests
Faster write speed, GB/s
12.0
8.4
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5273CH0-CH9 4GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
37
24
Read speed, GB/s
13.2
16.8
Write speed, GB/s
8.4
12.0
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2143
2946
Samsung M378B5273CH0-CH9 4GB RAM comparisons
Ramaxel Technology RMR1870EC58E9F1333 4GB
Golden Empire CL15-15-15 D4-2133 8GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB RAM comparisons
Samsung M393B1K70CH0-CH9 8GB
Samsung M378A1G43EB1-CPB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT51264AC800.C16FC 4GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Apacer Technology 78.01G86.9H50C 1GB
G Skill Intl F4-3000C15-4GTZB 4GB
Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology 16ATF1G64AZ-2G1A2 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Asgard VMA45UG-MIC1U22T2 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-3600C16-8GTZ 8GB
Avant Technology F6451U64F9333G 4GB
A-DATA Technology AO2P24HCST2-BTVS 16GB
Essencore Limited KD48GU88C-26N1600 8GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
Protocol Engines Kingrock 800 2GB 2GB
Kingston 9905711-038.A00G 8GB
SK Hynix HYMP512U64CP8-Y5 1GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Micron Technology 16ATF4G64AZ-3G2E1 32GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3733C17-16GTZR 16GB
Kingston 9965525-140.A00LF 8GB
Corsair CMK32GX4M4B3000C15 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) PSD48G213381S 8GB
Report a bug
×
Bug description
Source link