RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5273DH0-CH9 4GB
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
Compare
Samsung M378B5273DH0-CH9 4GB vs Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
Overall score
Samsung M378B5273DH0-CH9 4GB
Overall score
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5273DH0-CH9 4GB
Report a bug
Reasons to consider
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
Report a bug
Below the latency in the PassMark tests, ns
35
41
Around -17% lower latency
Faster reading speed, GB/s
19
13.3
Average value in the tests
Faster write speed, GB/s
13.8
8.3
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5273DH0-CH9 4GB
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
41
35
Read speed, GB/s
13.3
19.0
Write speed, GB/s
8.3
13.8
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2176
3331
Samsung M378B5273DH0-CH9 4GB RAM comparisons
G Skill Intl F3-14900CL9-4GBXL 4GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Elpida EBJ41UF8BDU5-GN-F 4GB
Crucial Technology BLS8G4D240FSEK.8FBR 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
UMAX Technology D4-2400-4GB-512X8-L 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Golden Empire CL16-18-18 D4-3200 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Avant Technology J642GU42J5213N1 16GB
A-DATA Technology VDQVE1B16 2GB
Mushkin MR[ABC]4U360JNNM8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMSX16GX4M2A3000C16 8GB
Micron Technology 16KTF1G64HZ-1G9E2 8GB
Crucial Technology CT16G4SFD8213.C16FAD 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
Samsung M3 78T2863EHS-CF7 1GB
Wilk Elektronik S.A. GR2666S464L19/16G 16GB
Kingston 99U5584-001.A00LF 4GB
Essencore Limited IM48GU48N24-FFFHM 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston ACR21D4S15HAG/8G 8GB
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
Corsair CMX8GX3M2A2000C9 4GB
Cortus SAS 8ATF51264AZ-2G1A1 4GB
Report a bug
×
Bug description
Source link