Samsung M378B5673EH1-CF8 2GB vs Crucial Technology CT8G4DFS632A.M4FB 8GB

Overall score

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Overall score

Crucial Technology CT8G4DFS632A.M4FB 8GB

Crucial Technology CT8G4DFS632A.M4FB 8GB

Differences Specifications Comments

Differences

Samsung M378B5673EH1-CF8 2GB

Reasons to consider
Samsung M378B5673EH1-CF8 2GB

Below the latency in the PassMark tests, ns

28 41

Around 32% lower latency

Crucial Technology CT8G4DFS632A.M4FB 8GB

Reasons to consider
Crucial Technology CT8G4DFS632A.M4FB 8GB

Faster reading speed, GB/s

18 12.7

Average value in the tests
Faster write speed, GB/s

11.0 7.5

Average value in the tests
Higher memory bandwidth, mbps

25600 8500

Around 3.01 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M378B5673EH1-CF8 2GB

Crucial Technology CT8G4DFS632A.M4FB 8GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

28 41
Read speed, GB/s

12.7 18.0
Write speed, GB/s

7.5 11.0
Memory bandwidth, mbps

8500 25600

Other

Description

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
Timings / Clock speed

7-7-7-20 / 1066 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

1988 2813

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

Latest comparisons

Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Crucial Technology BL8G36C16U4R.M8FE1 8GB

Crucial Technology BL8G36C16U4R.M8FE1 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Apacer Technology GD2.1831WS.001 16GB

Apacer Technology GD2.1831WS.001 16GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Corsair CMK8GX4M2A2133C13 4GB

Corsair CMK8GX4M2A2133C13 4GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

G Skill Intl F4-3400C16-8GTZKW 8GB

G Skill Intl F4-3400C16-8GTZKW 8GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

V-Color Technology Inc. TN416G24D817-VHA/R 16GB

V-Color Technology Inc. TN416G24D817-VHA/R 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Micron Technology 18ADF1G72PZ-2G1A1 8GB

Micron Technology 18ADF1G72PZ-2G1A1 8GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Kingston X5H5PW-MIB 8GB

Kingston X5H5PW-MIB 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Kingston KTD3KX-MIB 8GB

Kingston KTD3KX-MIB 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB