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Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4DFS632A.M4FB 8GB

Samsung M378B5673EH1-CF8 2GB vs Crucial Technology CT8G4DFS632A.M4FB 8GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
Crucial Technology CT8G4DFS632A.M4FB 8GB

Crucial Technology CT8G4DFS632A.M4FB 8GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 41
    左右 32% 更低的延时
Crucial Technology CT8G4DFS632A.M4FB 8GB 需要考虑的原因
Crucial Technology CT8G4DFS632A.M4FB 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.0 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 8500
    左右 3.01 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4DFS632A.M4FB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 41
  • 读取速度，GB/s
    12.7 left arrow 18.0
  • 写入速度，GB/s
    7.5 left arrow 11.0
  • 内存带宽，mbps
    8500 left arrow 25600
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 2813

Samsung M378B5673EH1-CF8 2GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

Crucial Technology CT8G4DFS632A.M4FB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4DFS632A.M4FB 8GB
Crucial Technology CT8G4DFS632A.M4FB 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-2400C17-4GFT 4GB
G Skill Intl F4-2400C17-4GFT 4GB
内存RAM
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Crucial Technology CT8G4SFD824A.C16FF 8GB
Crucial Technology CT8G4SFD824A.C16FF 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Kingston 9905624-004.A00G 4GB
Kingston 9905624-004.A00G 4GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Mushkin 99[2/7/4]191F 4GB
Mushkin 99[2/7/4]191F 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT16G4SFS832A.M8FE 16GB
Crucial Technology CT16G4SFS832A.M8FE 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-3200C22-8GRS 8GB
G Skill Intl F4-3200C22-8GRS 8GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Transcend Information TS512MSH64V1H 4GB
Transcend Information TS512MSH64V1H 4GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Smart Modular SF4642G8CK8IEHLSBG 16GB
Smart Modular SF4642G8CK8IEHLSBG 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Crucial Technology CT8G4DFRA32A.C8FP 8GB
Crucial Technology CT8G4DFRA32A.C8FP 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Essencore Limited IM44GU48N26-GIIHA0 4GB
Essencore Limited IM44GU48N26-GIIHA0 4GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Corsair CMK64GX4M4B3200C16 16GB
Corsair CMK64GX4M4B3200C16 16GB
内存RAM